Cu2(Zn,Al)SnS4 Thin Film Properties for Solar Cell Simulation

Aluminum-substituted Cu2ZnSnS4 thin films across 7 compositions (0 < x < 0.75) were analyzed for structural, optical, and electrical properties. Yongtao Qu deposited the films using ultrasonic spray pyrolysis and performed X-ray diffraction, Raman spectroscopy, and SCAPS-1D photovoltaic simulations. The dataset, last updated in 2026, links Al content to changes in band gap, hole mobility, and simulated solar cell efficiency.

Use Cases

• Modeling photovoltaic performance based on experimentally measured film properties using SCAPS-1D.
• Analyzing the relationship between Al substitution level (x) and optical band gap.
• Investigating the impact of cation substitution on hole mobility and intrinsic defect suppression.
• Identifying optimal material compositions (x = 0.25-0.5) for solar cell efficiency.

Strengths

• Contains data for 7 distinct compositional variations (0 < x < 0.75).
• Combines experimental measurements (XRD, Raman) with numerical device simulation (SCAPS-1D).
• Explicitly identifies an optimal substitution window (x = 0.25-0.5) for performance.

Limitations

• Column-level documentation is absent; field semantics must be inferred after download.
• Row count is unknown, which may limit suitability assessment.
• Data may reflect experimental bias inherent to the specific synthesis and measurement setup.

Provenance

Source

Yongtao Qu via figshare.

Collection Method

Films deposited by ultrasonic spray pyrolysis; properties measured via X-ray diffraction, Raman spectroscopy, and electrical characterization; performance simulated with SCAPS-1D.

Freshness

Last updated 2026-05-30 14:12:49; freshness should be verified.