InGaAs/InAlAs Single Photon Avalanche Diode Characterization Data

Experimental data characterizes a single photon avalanche diode designed for 1550 nm photon detection. The dataset includes measurements of leakage current, dark count rate, and single photon detection efficiency across temperatures from 210 to 294 K. It was authored by Xiao Meng and published in 2020.

Use Cases

• Model the relationship between temperature and breakdown voltage using the measured 45 mV K−1 dependence.
• Analyze the correlation between overbias voltage and timing jitter, which decreased to a minimum of 70 ps.
• Benchmark photon detection probability against dark count rate for gated-mode operation at 210 K, where values of 26% and 1×10⁸ Hz were recorded.
• Study the temperature stability of the SPAD using leakage current and dark count rate measurements across the 210-294 K range.

Strengths

• Data includes specific performance metrics like a 26% photon detection probability and a dark count rate of 1×10⁸ Hz.
• Characterization covers a defined temperature range from 210 to 294 K.
• The dataset documents a precise breakdown voltage temperature coefficient of approximately 45 mV K−1.
• Includes a measured timing jitter value as low as 70 ps full width at half maximum.

Limitations

• The dataset scope is limited to a single device, preventing generalization to other SPAD designs.
• No sample data or column structure is provided, complicating direct programmatic analysis.
• Data is from a single experimental study published in 2020 and is not updated.

Provenance

Source

Dryad

Collection Method

Experimental characterization of a fabricated single photon avalanche diode.

Freshness

Last updated 2020-06-24.