In Situ Electron Microscopy of Bi2Se3 Nanosheet Etching and Growth

High temporal resolution in situ microscopy tracks the etching kinetics of bismuth selenide nanosheets in vacuum and liquid environments. The dataset, shared by Linfeng Sheng on figshare, includes observations at 0.25 seconds per frame and details the role of electron-beam irradiation and structural defects. It was last updated in March 2026.

Use Cases

• Modeling surface etching kinetics based on in situ TEM observations of void defect evolution.
• Analyzing the influence of electron dose rates on material precipitation based on liquid cell microscopy data.
• Studying the site selectivity of etching processes based on reported ratios at edges versus corners.
• Investigating liquid layer dynamics and their impact on imaging based on high-temporal-resolution particle motion data.

Strengths

• High temporal resolution of 0.25 seconds per frame for dynamic process capture.
• Direct observation of etching site selectivity with a reported >80% ratio at edges.
• Data collected in both vacuum and liquid environments using TEM and LC-TEM/LC-SEM techniques.
• File size of 27.8 MB indicates a focused, downloadable dataset.

Limitations

• Row count and specific column definitions are unknown, limiting suitability assessment.
• Column-level documentation is absent; field semantics must be inferred after download.
• The dataset's 27.8 MB size suggests it is a small, potentially sample-scale collection.

Provenance

Source

figshare, author Linfeng Sheng

Collection Method

Data gathered via in situ transmission electron microscopy (TEM) and liquid cell electron microscopy (LC-TEM/LC-SEM).

Freshness

Last updated 2026-03-26 12:37:16