Optimized Voltage Pulse Schemes for Bilayer Oxide Memristors

Experimental data relates to optimizing pulse schemes for linear learning and forgetting in bilayer oxide resistive switching devices. The dataset was authored by THAMANKAR, RAMESH MOHAN and last updated on January 21, 2026.

Use Cases

• Analyze pulse scheme parameters to understand their impact on linearity in learning for neuromorphic applications.
• Model resistive switching behavior in MoO3/TiO2 bilayer memristors based on experimental pulse data.
• Correlate voltage pulse characteristics with synaptic linearity metrics for artificial synapse development.

Strengths

• Data is directly related to a specific, advanced research area: bilayer oxide memristors for neuromorphic applications.
• The dataset was last updated in January 2026, indicating recent relevance to the field.

Limitations

• No column definitions or sample data are available, making data structure and content unknown.
• The dataset size, row count, and file formats are unspecified, complicating assessment of its scale and usability.

Provenance

Source

Harvard Dataverse

Collection Method

Experimental data related to optimization of voltage pulse schemes for memristor devices.

Freshness

Last updated on 2026-01-21.