Electrical Characteristics of 12nm and 6nm Gate-Length Stacked NSFETs

A comparative analysis of electrical characteristics at terminal nodes for 12nm and 6nm gate-length stacked nanosheet field-effect transistors (NSFETs). The data likely contains figures of merit calculated under different transport mechanisms, including ballistic, phonon scattering, Coulombic scattering, and surface roughness scattering. The dataset was authored by Shubham and uploaded to figshare in May 2026.

Use Cases

• Benchmarking transistor performance based on gate length and transport mechanism comparisons mentioned in the description
• Training ML models for device parameter prediction based on electrical characteristics
• Validating physical models of scattering effects in nanoscale transistors

Strengths

• File size is 5.5 KB, indicating a compact and focused dataset.
• License is CC-BY-4.0, allowing for open sharing and reuse.

Limitations

• Row count is unknown, which may limit suitability assessment.
• Column-level documentation is absent; field semantics must be inferred after download.

Provenance

Source

figshare

Freshness

Last updated 2026-05-26 17:26:52; freshness should be verified.