Photovoltaic Inverter Reliability Test Data for 3 kW System in India

10,000 Monte Carlo simulation samples model the B10 lifetime of a 3 kW grid-connected photovoltaic inverter under a one-minute resolution yearly mission profile in Narsapur, India. The dataset compares the reliability and performance of inverters using conventional IGBT, super junction MOSFET, silicon carbide MOSFET, and gallium nitride HEMT technologies. It was authored by Sainadh Singh Kshatri and last updated in April 2026.

Use Cases

• Compare semiconductor device reliability based on B10 lifetime calculations for photovoltaic inverters.
• Model inverter lifetime using a two-parameter Weibull distribution based on Monte Carlo simulation results.
• Analyze the impact of environmental mission profiles, including solar irradiance and ambient temperature, on inverter performance.
• Evaluate efficiency and switch losses for different wide-bandgap semiconductor technologies in a grid-connected PV system.

Strengths

• Includes 10,000 Monte Carlo simulation samples for robust statistical analysis.
• Compares four distinct semiconductor technologies (IGBT, SJ-M, SiC-M, GaN-H) for performance benchmarking.
• Based on a real-time mission profile with one-minute resolution for environmental factors in a specific Indian location.

Limitations

• Row count is unknown, which may limit suitability assessment.
• Column-level documentation is absent; field semantics must be inferred after download.
• The dataset is very small at 5.5 KB, indicating limited scope.

Provenance

Source

figshare

Collection Method

Reliability-oriented performance evaluation of a 3 kW photovoltaic inverter system using Monte Carlo simulation.

Freshness

Last updated 2026-04-30 17:41:40; freshness should be verified.

Geography

Narsapur, India