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India-based reliability simulation for a 3 kW grid-connected photovoltaic inverter using wide-bandgap semiconductors. The dataset, created by Sainadh Singh Kshatri, models the B10 lifetime using a two-parameter Weibull distribution and Monte Carlo simulation with 10,000 samples. It compares performance metrics like switch losses and efficiency for conventional IGBT, super junction MOSFET, silicon carbide MOSFET, and gallium nitride HEMT based inverters under a one-minute resolution yearly mission profile.
Data is in XLS (Excel) format. License is CC-BY-4.0, requiring attribution.