InGaN/GaN Quantum Well Photoluminescence Data by Growth Temperature

Research data from a 2026 figshare upload by Daniel Dyer. It contains measurements from zincblende InGaN/GaN quantum wells grown by metal-organic vapor phase epitaxy. The dataset likely includes photoluminescence emission spectra and intensity data at different growth temperatures and excitation densities.

Use Cases

• Modeling the relationship between quantum well growth temperature and photoluminescence emission energy.
• Analyzing thermal quenching behavior in semiconductor quantum wells based on integrated emission intensity data.
• Investigating the absence of internal polarization fields in zincblende structures based on excitation density independence.

Strengths

• Data includes specific growth temperature values (740°C to 684°C) and corresponding emission energies (2.75 eV to 2.0 eV).
• Contains quantified thermal quenching data, with integrated emission intensity at 300 K ranging from 22% to 34% of its 11 K value.
• Published under a permissive CC-BY-4.0 license for reuse.

Limitations

• Row count and specific column definitions are unknown, requiring manual inspection after download.
• The dataset is small (648.6 KB), indicating a limited experimental scope.

Provenance

Source

Daniel Dyer via figshare.

Collection Method

Data generated from metal-organic vapor phase epitaxy growth and subsequent photoluminescence measurements of quantum well samples.

Freshness

Last updated 2026-03-17 15:29:09.