Supplementary Materials: Simulated I-V and C-f Data for GaAsSb Photodiodes

157.1 KB of supplementary materials from Yongkang Xia, uploaded in May 2026. The DOCX file contains simulated dark- and photo current-voltage (I-V) characteristics for GaAsSb/InP, GaAsSb/InAlAs/InP, and GaAsSb/Si photodiodes. It also includes capacitance-frequency (C-f) measurements for diodes treated with HF and O2 plasma.

Use Cases

• Modeling photodiode performance based on simulated dark and photo I-V curves.
• Analyzing the effects of surface treatments (O2 plasma, HF) on diode electrical characteristics.
• Comparing device behavior across different material substrates (InP, InAlAs/InP, Si).
• Validating semiconductor simulation tools against provided I-V and C-f data.

Strengths

• Data is shared under a permissive CC-BY-4.0 license.
• Includes simulated results for multiple device structures and experimental treatments.
• Uploaded on 2026-05-01, indicating recent availability.

Limitations

• Description metadata is limited; actual data quality requires manual inspection after download.
• Column-level documentation is absent; field semantics must be inferred after download.
• Row count is unknown, which may limit suitability assessment.

Provenance

Source

figshare, authored by Yongkang Xia.

Collection Method

Likely contains simulated and experimental measurements from semiconductor device research.

Time Range

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Freshness

Last updated 2026-05-01 12:24:28; freshness should be verified.

Geography

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