A NASA Ames study presents data from lightning injection experiments on power MOSFETs in their ON state. The dataset likely contains performance parameters and damage analysis to model device degradation from high-stress events. This work supports prognostics and health management for power electronics used in critical aerospace roles.
Use Cases
- Modeling device degradation based on lightning-induced damage described in the study.
- Analyzing the effects of high-stress events on MOSFET performance parameters.
- Developing remaining useful life prognosis models for damaged power electronics.
- Studying the behavior of power MOSFETs under normal operation after lightning stress.
Strengths
- Dataset originates from NASA, a leading aerospace research institution.
- Focuses on a critical high-stress event (lightning) for aerospace component reliability.
Limitations
- Column-level documentation is absent; field semantics must be inferred after download.
- Row count is unknown, which may limit suitability assessment.
- Description metadata is limited; actual data quality requires manual inspection after download.
Provenance
- Source
- National Aeronautics and Space Administration (NASA Ames)
- Collection Method
- Lightning injection experiments on power MOSFETs, as described in the associated paper.
- Time Range
- null
- Freshness
- Last updated 2026-03-13 20:32:17.200272; freshness should be verified
- Geography
- null