B10 Lifetime Comparison for Photovoltaic Inverters in Narsapur, India

10,000 Monte Carlo simulation samples model the B10 lifetime of a 3 kW photovoltaic inverter under a one-minute resolution yearly mission profile. The dataset compares the reliability and performance of inverters using IGBT, SJ-MOSFET, SiC-MOSFET, and GaN-HEMT semiconductor technologies. Author Sainadh Singh Kshatri published the data on figshare in April 2026 under a CC-BY-4.0 license.

Use Cases

• Compare B10 lifetime estimates for different semiconductor technologies based on the described Monte Carlo simulation.
• Analyze the impact of solar irradiance and ambient temperature on inverter reliability based on the one-minute mission profile data.
• Model power losses and efficiency for photovoltaic inverters using the performance metrics mentioned in the description.
• Benchmark the reliability improvement of wide-bandgap semiconductors against conventional IGBTs based on the reported 40% loss reduction.

Strengths

• Dataset is based on a Monte Carlo simulation with 10,000 samples, providing a statistical foundation for reliability analysis.
• Analysis uses a real-time, one-minute resolution yearly mission profile for a specific location (Narsapur, India).
• Directly compares four distinct semiconductor technologies (IGBT, SJ-M, SiC-M, GaN-H) for performance and reliability.

Limitations

• Column-level documentation is absent; field semantics must be inferred after download.
• Row count is unknown, which may limit suitability assessment.
• The dataset is very small at 5.5 KB, indicating limited scope or highly summarized results.

Provenance

Source

figshare, author Sainadh Singh Kshatri.

Collection Method

Data likely generated from reliability modeling and Monte Carlo simulation of a 3 kW grid-connected PV inverter system.

Freshness

Last updated 2026-04-30 17:41:50; freshness should be verified.

Geography

Narsapur, India.