B10 Lifetime Comparison for Photovoltaic Inverters in Narsapur, India

A dataset comparing the B10 lifetime, a reliability metric, for different semiconductor technologies in a 3 kW grid-connected photovoltaic inverter system. The data is based on a Monte Carlo simulation with 10,000 samples using a one-minute resolution yearly mission profile for solar irradiance and ambient temperature in Narsapur, India. It was created by Sainadh Singh Kshatri and last updated in April 2026.

Use Cases

• Compare reliability metrics like B10 lifetime for IGBT, SJ-M, SiC-M, and GaN-H based inverters as described.
• Model semiconductor lifetime using a two-parameter Weibull distribution based on mission profile data.
• Analyze the impact of environmental factors (solar irradiance, ambient temperature) on inverter performance metrics.
• Evaluate the efficiency gains and loss reduction (reportedly 40%) from wide-bandgap semiconductors versus conventional IGBTs.

Strengths

• Simulation includes 10,000 Monte Carlo samples for statistical robustness.
• Analysis is based on a real-time, one-minute resolution yearly mission profile for a specific location.
• Compares four distinct semiconductor technologies (IGBT, SJ-M, SiC-M, GaN-H) for performance and reliability.

Limitations

• Row count and specific column definitions are unknown, requiring inspection after download.
• The dataset is very small at 5.5 KB, indicating limited scope or highly summarized results.
• Geographic coverage is limited to a single location (Narsapur, India).

Provenance

Source

Sainadh Singh Kshatri via figshare.

Collection Method

Data likely generated from reliability modeling and Monte Carlo simulation of a photovoltaic inverter system.

Freshness

Last updated 2026-04-30 17:41:50.

Geography

Narsapur, India.