Static B10 Lifetime SiC-MOSFET PV Inverter: Reliability Simulation for India

A dataset supporting a reliability analysis of a 3 kW grid-connected photovoltaic inverter using wide-bandgap semiconductors. It contains simulation results from a Monte Carlo method with 10,000 samples, modeling the B10 lifetime under a one-minute resolution yearly mission profile for Narsapur, India. The data was authored by Sainadh Singh Kshatri and last updated in April 2026.

Use Cases

• Compare inverter reliability metrics based on different semiconductor technologies (IGBT, SJ-M, SiC-M, GaN-H) as described.
• Model power electronic component lifetime using a two-parameter Weibull distribution based on the described Monte Carlo simulation.
• Analyze the impact of environmental mission profiles (solar irradiance, ambient temperature) on photovoltaic system performance.
• Evaluate the relationship between switch losses, inverter efficiency, and output power for reliability-oriented design.

Strengths

• Simulation results are based on a detailed one-minute resolution yearly mission profile for a specific location.
• The Monte Carlo simulation includes 10,000 samples with a 5% parameter variation for statistical robustness.
• Performance comparison includes four distinct semiconductor technologies (conventional IGBT, SJ-M, SiC-M, GaN-H).

Limitations

• Row count is unknown, which may limit suitability assessment.
• Column-level documentation is absent; field semantics must be inferred after download.
• The dataset is very small (5.5 KB), indicating limited scope or highly summarized results.

Provenance

Source

figshare, author Sainadh Singh Kshatri

Collection Method

Likely generated via Monte Carlo simulation and reliability modeling based on real-time mission profile data.

Freshness

Last updated 2026-04-30 17:41:46; freshness should be verified.

Geography

Modeled for Narsapur, India.