<p>Static B₁₀ Lifetime SJ-MOSFET based PV Inverter.</p>

A dataset containing reliability simulation results for a 3 kW grid-connected photovoltaic inverter system. The data was generated by author Sainadh Singh Kshatri using Monte Carlo simulation with 10,000 samples to model the B10 lifetime of various semiconductor components under a one-minute resolution yearly mission profile from Narsapur, India. It compares the performance of conventional IGBT, super junction MOSFET, silicon carbide MOSFET, and gallium nitride HEMT based inverters.

Use Cases

• Compare the B10 lifetime and efficiency of wide-bandgap semiconductors versus conventional IGBTs based on the simulation results.
• Model inverter component failure rates under specific environmental conditions based on the solar irradiance and ambient temperature mission profile.
• Analyze the relationship between switch losses, inverter efficiency, and output power for different semiconductor technologies as described in the study.

Strengths

• Simulation includes 10,000 Monte Carlo samples with 5% parameter variation for statistical robustness.
• Analysis is based on a real-time, one-minute resolution yearly mission profile for a specific location (Narsapur, India).
• Directly compares four distinct semiconductor technologies (IGBT, SJ-M, SiC-M, GaN-H).

Limitations

• Dataset is very small at 5.5 KB, indicating limited scope or a summary of results rather than raw simulation data.
• Column-level documentation is absent; field semantics must be inferred after download.
• Row count is unknown, which may limit suitability assessment.

Provenance

Source

figshare, author Sainadh Singh Kshatri.

Collection Method

Data was generated via Monte Carlo simulation of a photovoltaic inverter system model.

Time Range

Covers a simulated yearly mission profile.

Freshness

Last updated 2026-04-30 17:41:43; freshness should be verified.

Geography

Simulation is based on environmental data from Narsapur, India.